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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION *With TO-220 package *High power dissipation APPLICATIONS *Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5293 VCBO Collector-base voltage 2N5295 2N5297 2N5293 VCEO Collector-emitter voltage 2N5295 2N5297 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 60 80 70 40 60 7 4 2 36 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.47 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5293 VCEO(SUS) Collector-emitter sustaining voltage 2N5295 2N5297 2N5293 VCEsat Collector-emitter saturation voltage 2N5295 2N5297 2N5293 VBE Base-emitter on voltage 2N5295 2N5297 2N5293/5297 ICEV Collector cut-off current 2N5295 ICER Collector cut-off current 2N5293/5297 2N5295 IEBO Emitter cut-off current 2N5293/5297 2N5293 hFE DC current gain 2N5295 2N5297 fT Transition frequency 2N5293 ton Turn-on time 2N5295 2N5297 2N5293 toff Turn-off time 2N5295 2N5297 VEB=5V; IC=0 IC=0.1A ;IB=0 SYMBOL 2N5293 2N5295 2N5297 CONDITIONS MIN 70 40 60 TYP. MAX UNIT V IC=0.5A;IB=0.05A IC=1.0A;IB=0.1A IC=1.5A;IB=0.15A IC=0.5A ; VCE=4V IC=1.0A ; VCE=4V IC=1.5A ; VCE=4V VCE=65V;VBE=1.5V TC=150 VCE=35V;VBE=1.5V TC=150 VCE=50V;RBE=100< TC=150 VEB=7V; IC=0 1.0 mA 1.1 1.3 1.5 0.5 3.0 2.0 5.0 0.5 2.0 V 1.0 V mA mA IC=0.5A ; VCE=4V 30 IC=1.0A ; VCE=4V IC=1.5A ; VCE=4V IC=0.2A ; VCE=4V IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V IC=0.5A;IB=0.05A;VCC=30V IC=1.0A;IB=0.1A;VCC=30V IC=1.5A;IB=0.15A;VCC=30V 15 s 5.0 s 20 0.8 80 MHz 120 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5293 2N5295 2N5297 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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